Recherche sur l'auteur "E. HERR", mai 2002.
Copyright - [Précédente] [Première page] [Suivante] - Home

Fiche : [DATA240]

Titre : Recherche sur l'auteur E. HERR, mai 2002.

Cité dans : [DIV096]  Recherches bibliographiques diverses, avril 2013.
Auteur : Thierry LEQUEU
Date : mai 2002

Vers : Recherche STN Easy du lundi 13 mai 2002
Vers : Recherche maison du 13 mai 2002
Vers : Classement par année


Recherche STN Easy du lundi 13 mai 2002

TOP

Question : "author: e herr"
Réponses : 18 dans la banque de données COMPENDEX
Réponses : 22 dans la banque de données INSPEC
Titres dans Banque de données COMPENDEX
1 A novel power module design and technology for improved power cycling capability.
2 Reliability of non-hermetic pressure contact IGBT modules.
3 Increased lifetime of wire bonding connections for IGBT power modules.
4 Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules.
5 Extrapolation of cosmic ray induced failures from test to field conditions for IGBT modules.
6 Substrate-to-base solder joint reliability in high power IGBT modules.
7 Comparison of emitter concepts for high voltage IGBTs.
8 Reliable 1200 amp 2500 V IGBT modules for traction applications.
9 Improving the gate oxide integrity of very high voltage MCT and IGBT devices by external gettering of metal impurities.
10 Gate insulation yield loss due to lattice misfit stress in MCT and IGBT devices.
11 KOH etching of high-index crystal planes in silicon.
12 KOH etch rates of high-index planes from mechanically prepared silicon crystals.
13 Computer-Aided Allocation of Calorific Value Measurements Taken at the Feed Points of a Long-Distance Gas Grid to the Gas Volumes Withdrawn at Transfer Stations.
RECHNERGESTUETZTE ZUORDNUNG VON AN DEN EINSPEISEPUNKTEN EINES FERNGASNETZES VORGENOMMENEN BRENNWERTMESSUNGEN ZU DEN AN UEBERGABESTATIONEN ENTNOMMENEN GASMENGEN.
14 FLASH RADIOGRAPHY APPLICATION IN A STABALLOY ENVIRONMENT.
15 RELIABILITY EVALUATION AND PREDICTION FOR DISCRETE SEMICONDUCTORS.
16 TRANSISTOR HIGH-RELIABILITY PROGRAM.
17 PLASTIC ENCAPSULATED SIGNAL AND POWER TRANSISTOR RELIABILITY.
18 RELIABILITY PHYSICS, SYMPOSIUM, 10TH, ANNUAL, PROCEEDINGS, 1972.

Titres dans Banque de données INSPEC
19 A novel power module design and technology for improved power cycling capability.
20 Reliability of non-hermetic pressure contact IGBT modules.
21 Increased lifetime of wire bonding connections for IGBT power modules.
22 Soft punch through IGBTs in LoPak modules boost power.
23 Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules.
24 Extrapolation of cosmic ray induced failures from test to field conditions for IGBT modules.
25 Substrate-to-base solder joint reliability in high power IGBT modules.
26 A comparison of emitter concepts for high voltage IGBTs.
27 Reliable 1200 amp 2500 V IGBT modules for traction applications.
28 Improving the gate oxide integrity of very high voltage MCT and IGBT devices by external gettering of metal impurities.
29 Gate insulation yield loss due to lattice misfit stress in MCT and IGBT devices.
30 KOH etching of high-index crystal planes in silicon.
31 KOH etch rates of high-index planes from mechanically prepared silicon crystals.
32 Hierarchical models give new simulation accuracy.
33 HVIC half bridge driver-applications and reliability.
34 Absolute cross sections of Na 2p5/3s2 2P for 10-200 keV proton impact.
35 Managing the information revolution.
36 Reliability evaluation and prediction for discrete semiconductors.
37 Transistor high-reliability program.
38 Plastic encapsulated signal and power transistor reliability.
39 Reliability improvement with new passivation of solid encapsulated transistors.
40 Reliability of epoxy transistors.

  [1] :  [ART241]  U. SCHEUERMANN, E. HERR, A novel power module design and technology for improved power cycling capability, Microelectronics Reliability, Vol. 41, No. 9-10, September/October 2001, pp. 1713-1718.
  [2] :  [ART242]  R. SCHLEGEL, E. HERR, F. RICHTER, Reliability of non-hermetic pressure contact IGBT modules,  Microelectronics Reliability, Volume 41, No. 9-10, September/October 2001, pp. 1689-1694.
  [3] :  [ART243]  A. HAMIDI, S. KAUFMANN, E. HERR, Increased lifetime of wire bonding connections for IGBT power modules APEC'2001.
  [4] : [SHEET361] A. HAMIDI, N. BECK, K. THOMAS, E. HERR, Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules, ESREF'99.
  [5] :  [ART245]  C. FINDEISEN, E. HERR, M. SCHENKEL, R. SCHLEGEL, H.R. ZELLER, Extrapolation of cosmic ray induced failures from test to field conditions for IGBT modules, Microelectronics and Reliability, Vol. 38, No. 6-8, Jun-Aug 1998, pp. 1335-1339.
  [6] :  [ART223]  E. HERR, T. FREY, R. SCHLEGEL, A. STUCK, R. ZEHRINGER, Substrate to base solder joint reliability in high-power IGBT modules, Microelectron. Reliab. Vol. 37, 1997, pp. 1719-1722.
  [7] :  [ART246]  F. Bauer, W. Fichtner, H. Dettmer, R. Bayerer, E. Herr, T. Stockmeier, U. Thiemann, Comparison of emitter concepts for high voltage IGBTs, ISPSD'95.
  [8] :  [ART226]  T. STOCKMEIER, R. BAYERER, D. SINERIUS, E. HERR, U. THIEMANN, Reliable 1200 A, 2500 V  IGBT Modules For Traction Applications, IEE Colloquium on IGBT Propulsion Drives, London, 1995.
  [9] :  [ART248]  E. HERR, U. BALTES, U. THIEMANN, T. STOCKMEIER, Improving the gate oxide integrity of very high voltage MCT and IGBT devices by external gettering of metal impurities, ISPSD'94.
 [10] :  [ART249]  E. HERR, H. BALTES, T. STOCKMEIER, U. THIEMANN, Gate insulation yield loss due to lattice misfit stress in MCT and IGBT devices, ISPSD'93.
 [11] :  [PAP158]  -------
 [12] :  [PAP158]  -------
 [13] :  [PAP158]  -------
 [14] :  [PAP158]  -------
 [15] :  [ART250]  E.A. HERR, A. POE, A. FOX, RELIABILITY EVALUATION AND PREDICTION FOR DISCRETE SEMICONDUCTORS, IEEE Trans. Reliab. 1980.
 [16] :  [ART251]  E.A. HERR, A. POE, TRANSISTOR HIGH-RELIABILITY PROGRAM, IAS 1977.
 [17] :  [ART252]  E.A. HERR, A. FOX, J.S. READ, PLASTIC ENCAPSULATED SIGNAL AND POWER TRANSISTOR RELIABILITY, IEEE 1974
 [18] :  [PAP158]  -------
 [19] :  [ART241]  U. SCHEUERMANN, E. HERR, A novel power module design and technology for improved power cycling capability, Microelectronics Reliability, Vol. 41, No. 9-10, September/October 2001, pp. 1713-1718.
 [20] :  [ART242]  R. SCHLEGEL, E. HERR, F. RICHTER, Reliability of non-hermetic pressure contact IGBT modules,  Microelectronics Reliability, Volume 41, No. 9-10, September/October 2001, pp. 1689-1694.
 [21] :  [ART243]  A. HAMIDI, S. KAUFMANN, E. HERR, Increased lifetime of wire bonding connections for IGBT power modules APEC'2001.
 [22] :  [PAP160]  ???
 [23] : [SHEET361] A. HAMIDI, N. BECK, K. THOMAS, E. HERR, Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules, ESREF'99.
 [24] :  [ART245]  C. FINDEISEN, E. HERR, M. SCHENKEL, R. SCHLEGEL, H.R. ZELLER, Extrapolation of cosmic ray induced failures from test to field conditions for IGBT modules, Microelectronics and Reliability, Vol. 38, No. 6-8, Jun-Aug 1998, pp. 1335-1339.
 [25] :  [ART262]  E. HERR, T. FREY, R. SCHLEGEL, A. STUCK, R. ZEHRINGER, Substrate to base solder joint reliability in high-power IGBT modules, ESREF'97, 1997, pp. 1719-1722.
 [26] :  [ART246]  F. Bauer, W. Fichtner, H. Dettmer, R. Bayerer, E. Herr, T. Stockmeier, U. Thiemann, Comparison of emitter concepts for high voltage IGBTs, ISPSD'95.
 [27] :  [ART226]  T. STOCKMEIER, R. BAYERER, D. SINERIUS, E. HERR, U. THIEMANN, Reliable 1200 A, 2500 V  IGBT Modules For Traction Applications, IEE Colloquium on IGBT Propulsion Drives, London, 1995.
 [28] :  [ART248]  E. HERR, U. BALTES, U. THIEMANN, T. STOCKMEIER, Improving the gate oxide integrity of very high voltage MCT and IGBT devices by external gettering of metal impurities, ISPSD'94.
 [29] :  [ART249]  E. HERR, H. BALTES, T. STOCKMEIER, U. THIEMANN, Gate insulation yield loss due to lattice misfit stress in MCT and IGBT devices, ISPSD'93.
 [30] :  [PAP158]  -------
 [31] :  [PAP158]  -------
 [32] :  [ART253]  J.L. UCLES, J.M. SILIATO, R.E. WASSMER, E.R. HERR, Hierarchical models give new simulation accuracy, 1990.
 [33] :  [ART254]  D.F. Henderson, E.A. Herr, J.G. Mansmann, E.J. Wildi, W. Dobrzynski, HVIC half bridge driver-applications and reliability, PCI'88.
 [34] :  [PAP158]  -------
 [35] :  [PAP158]  -------
 [36] :  [ART250]  E.A. HERR, A. POE, A. FOX, RELIABILITY EVALUATION AND PREDICTION FOR DISCRETE SEMICONDUCTORS, IEEE Trans. Reliab. 1980.
 [37] :  [ART251]  E.A. HERR, A. POE, TRANSISTOR HIGH-RELIABILITY PROGRAM, IAS 1977.
 [38] :  [ART252]  E.A. HERR, A. FOX, J.S. READ, PLASTIC ENCAPSULATED SIGNAL AND POWER TRANSISTOR RELIABILITY, IEEE 1974
 [39] :  [ART247]  E.A. HERR, Reliability improvement with new passivation of solid encapsulated transistors IEEE1972.
 [40] :  [ART244]  E.A. HERR, A. FOX, Reliability of epoxy transistors, IEEE 1969.


Recherche maison du 13 mai 2002

TOP

  [1] :  [ART223]  E. HERR, T. FREY, R. SCHLEGEL, A. STUCK, R. ZEHRINGER, Substrate to base solder joint reliability in high-power IGBT modules, Microelectron. Reliab. Vol. 37, 1997, pp. 1719-1722.
  [2] :  [ART226]  T. STOCKMEIER, R. BAYERER, D. SINERIUS, E. HERR, U. THIEMANN, Reliable 1200 A, 2500 V  IGBT Modules For Traction Applications, IEE Colloquium on IGBT Propulsion Drives, London, 1995.
  [3] :  [ART181]  U. SCHEUERMANN, E. HERR, A Novel Power Module Design and Technology for Improved Power Cycling Capability, ESREF'2001.
  [4] :  [PAP371]  R. Schlegel, E. Herr, F. Richter, Reliability of non-hermetic pressure contact IGBT modules, ESREF'2001, pp. 1689-1694
  [5] : [SHEET361] A. HAMIDI, N. BECK, K. THOMAS, E. HERR, Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules, ESREF'99.


Classement par année

TOP

Année 2000 à 200x
  [1] :  [ART181]  U. SCHEUERMANN, E. HERR, A Novel Power Module Design and Technology for Improved Power Cycling Capability, ESREF'2001.
  [2] :  [ART241]  U. SCHEUERMANN, E. HERR, A novel power module design and technology for improved power cycling capability, Microelectronics Reliability, Vol. 41, No. 9-10, September/October 2001, pp. 1713-1718.
  [3] :  [ART242]  R. SCHLEGEL, E. HERR, F. RICHTER, Reliability of non-hermetic pressure contact IGBT modules,  Microelectronics Reliability, Volume 41, No. 9-10, September/October 2001, pp. 1689-1694.
  [4] :  [ART243]  A. HAMIDI, S. KAUFMANN, E. HERR, Increased lifetime of wire bonding connections for IGBT power modules APEC'2001.
  [5] :  [PAP371]  R. Schlegel, E. Herr, F. Richter, Reliability of non-hermetic pressure contact IGBT modules, ESREF'2001, pp. 1689-1694
Année 1990 à 1999
  [1] : [SHEET361] A. HAMIDI, N. BECK, K. THOMAS, E. HERR, Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules, ESREF'99.
  [2] :  [ART245]  C. FINDEISEN, E. HERR, M. SCHENKEL, R. SCHLEGEL, H.R. ZELLER, Extrapolation of cosmic ray induced failures from test to field conditions for IGBT modules, Microelectronics and Reliability, Vol. 38, No. 6-8, Jun-Aug 1998, pp. 1335-1339.
  [3] :  [ART223]  E. HERR, T. FREY, R. SCHLEGEL, A. STUCK, R. ZEHRINGER, Substrate to base solder joint reliability in high-power IGBT modules, Microelectron. Reliab. Vol. 37, 1997, pp. 1719-1722.
  [4] :  [ART262]  E. HERR, T. FREY, R. SCHLEGEL, A. STUCK, R. ZEHRINGER, Substrate to base solder joint reliability in high-power IGBT modules, ESREF'97, 1997, pp. 1719-1722.
  [5] :  [ART226]  T. STOCKMEIER, R. BAYERER, D. SINERIUS, E. HERR, U. THIEMANN, Reliable 1200 A, 2500 V  IGBT Modules For Traction Applications, IEE Colloquium on IGBT Propulsion Drives, London, 1995.
  [6] :  [ART246]  F. Bauer, W. Fichtner, H. Dettmer, R. Bayerer, E. Herr, T. Stockmeier, U. Thiemann, Comparison of emitter concepts for high voltage IGBTs, ISPSD'95.
  [7] :  [ART248]  E. HERR, U. BALTES, U. THIEMANN, T. STOCKMEIER, Improving the gate oxide integrity of very high voltage MCT and IGBT devices by external gettering of metal impurities, ISPSD'94.
  [8] :  [ART249]  E. HERR, H. BALTES, T. STOCKMEIER, U. THIEMANN, Gate insulation yield loss due to lattice misfit stress in MCT and IGBT devices, ISPSD'93.
  [9] :  [ART253]  J.L. UCLES, J.M. SILIATO, R.E. WASSMER, E.R. HERR, Hierarchical models give new simulation accuracy, 1990.
Année 1980 à 1989
  [1] :  [ART254]  D.F. Henderson, E.A. Herr, J.G. Mansmann, E.J. Wildi, W. Dobrzynski, HVIC half bridge driver-applications and reliability, PCI'88.
  [2] :  [ART250]  E.A. HERR, A. POE, A. FOX, RELIABILITY EVALUATION AND PREDICTION FOR DISCRETE SEMICONDUCTORS, IEEE Trans. Reliab. 1980.
Année 1970 à 1979
  [1] :  [ART251]  E.A. HERR, A. POE, TRANSISTOR HIGH-RELIABILITY PROGRAM, IAS 1977.
  [2] :  [ART252]  E.A. HERR, A. FOX, J.S. READ, PLASTIC ENCAPSULATED SIGNAL AND POWER TRANSISTOR RELIABILITY, IEEE 1974
  [3] :  [ART247]  E.A. HERR, Reliability improvement with new passivation of solid encapsulated transistors IEEE1972.
Année 1960 à 1969
  [1] :  [ART244]  E.A. HERR, A. FOX, Reliability of epoxy transistors, IEEE 1969.


Mise à jour le jeudi 19 septembre 2013 à 08 h 12 - E-mail : thierry.lequeu@gmail.com
Cette page a été produite par le programme TXT2HTM.EXE, version 10.5 du 3 décembre 2006.

Copyright 2013 : TOP
Les informations contenues dans cette page sont à usage strict de Thierry LEQUEU et ne doivent être utilisées ou copiées par un tiers.
Powered by www.google.fr, www.e-kart.fr, La Boutique Kartmasters and www.lequeu.fr.