H. YE, M. LIN, C. BASARAN, "Failure modes and FEM analysis of power electronic packaging", Finite Elements in Analysis and Design, Volume 38 , Issues 7, May 2002, pp. 601-612.
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Titre : H. YE, M. LIN, C. BASARAN, Failure modes and FEM analysis of power electronic packaging, Finite Elements in Analysis and Design, Volume 38 , Issues 7, May 2002, pp. 601-612.

Cité dans : [DIV334]  Recherche sur les mots clés power cycling of power device, mai 2002.
Cité dans : [DATA035] Recherche sur les mots clés thermal + fatigue + semiconductor et reliability + thermal + cycle, mars 2004.
Cité dans : [ART510]  Failure modes and FEM analysis of power electronic packaging.
Auteur : Hua Ye
Auteur : Minghui Lin
Auteur : Cemal Basaran

Vers : Bibliographie
Adresse : UB Electronic Packaging Laboratory, State University of New York at Buffalo, 101 Ketter Hall, North Campus, Buffalo, NY 14260-4300, USA
Tel. : +1-716-645-2114/2429
Fax. : +1-716-645-3733
Lien : mailto:cjb@eng.buffalo.edu
Source : Finite Elements in Analysis and Design
Volume : 38
Isues : 7
Date : May 2002
Pages : 601 - 612
DOI : 10.1016/S0168-874X(01)00094-4
PII : S0168-874X(01)00094-4
Lien : private/HUAYE1.pdf - 12 pages, 295 Ko.
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Abstract :
The development of power electronics technology is driven by the insatiate
demand to control electrical power. The new power electronics devices reduce the
volume of the converters by three to four orders of magnitude compared to their
mercury arc predecessor. And the turn-on and turn-off time has decreased from
milliseconds to the microseconds and even nanoseconds, depending on power level.
The power range commanded by converters now extends from micro-VA to several
hundreds of mega-MVA. Among the new power devices, insulated gate bipolar
transistor (IGBT) devices are being more accepted and increasingly used in
traction application such as locomotive, elevator, tram and subway. Thus the
long-term reliability of IGBT is highly demanded. In this paper the failure
modes of power electronics devices especially IGBTs are reviewed. A FEM analysis
of a multilayered IGBT packaging module under cyclic thermal loading is presented.

Author Keywords: Failure modes; Electronic packaging; Power electronic
packaging; Finite element analysis; Reliability; IGBT

Article Outline
1. Failure modes of power electronics packaging
1.1. Emitter bonding wire lifting failure
1.2. Solder degradation
1.3. Cracks in silicon die and substrate
1.4. Electro-migration in bonding wires
1.5. Surface degradation in emitter bonding pads
2. FEM analysis of IGBT modules under cyclic thermal loading
3. Conclusions
4. Uncited references
Acknowledgements

Bibliographie

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Références : 23
[1] : J.D. Van Wyk, F.C. Lee, Power electronics technology at the dawn of the new millennium status and future, Pesc Record - IEEE Power Electronics Specialists Conference, Charleston SC, USA, Vol. 1, 1999, pp. 3-12.
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[12] : T.W. Lee, Thermomechanical effects of EOS. In: T. Lee and S. Pabbisetty, Editors, Microelectronics Failure Analysis, Desk Reference (3rd Edition ed.),, ASM International, Material Park, OH (1993), pp. 335-352.
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[18] : J. He, M.C. Shaw, N. Sridhar, B.N. Cox, D.R. Clarke, Direct measurements of thermal stress distributions in large die bonds for power electronics, Electronic Packaging Materials Science X Materials Research Society Symposium - Proceedings, Vol. 515, 1998, pp. 99-104.
[19] : J. He, M.C. Shaw, J.C. Mather, R.C. Addison Jr., Direct measurement and analysis of the time-dependent evolution of stress in silicon devices and solder interconnections in power assemblies, Conference Record - IAS Annual Meeting (IEEE Industry Applications Society), Vol. 2, No. 98CH36242, 1998, pp. 1038-1045.
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Failure modes and FEM analysis of power electronic packaging

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Cité dans : [DATA035] Recherche sur les mots clés thermal + fatigue + semiconductor et reliability + thermal + cycle, mars 2004.
Auteur : Ye, Hua (UB Electronic Packaging Laboratory North Campus State Univ. of New York at Buffalo, Buffalo, NY 14260-4300, United States)
Auteur : Lin, Minghui
Auteur : Basaran, Cemal

Source : Finite Elements in Analysis and Design v 38 n 7 May 2002 2002.p 601-612
CODEN : FEADEU
ISSN : 0168-874X
Année : 2002
Document_Type : Journal
Treatment_Code : Theoretical
Language : English
Stockage :
Switches :
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Abstract :
The development of power electronics technology is driven by the insatiate demand to control electrical power. The new power electronics devices reduce the volume of the converters by three to four orders of magnitude compared to their mercury arc predecessor. And the turn-on and turn-off time has decreased from milliseconds to the microseconds and even nanoseconds, depending on power level. The power range commanded by converters now extends from micro-VA to several hundreds of mega-MVA. Among the new power devices, insulated gate bipolar transistor (IGBT) devices are being more accepted and increasingly used in traction application such as locomotive, elevator, tram and subway. Thus the long-term reliability of IGBT is highly demanded. In this paper the failure modes of power electronics devices especially IGBTs are reviewed. A FEM analysis of a multilayered IGBT packaging module under cyclic thermal loading is presented. $CPY 2001 Elsevier Science B.V. All rights reserved. 24 Refs.

Accession_Number : 2002(10):524 COMPENDEX

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